8.4: Current Temperature Stress Study of RF Sputter a-InGaZnO TFTs
نویسندگان
چکیده
Current temperature stress (CTS) measurements were performed on RF sputter amorphous In-Ga-Zn-O (a-InGaZnO) thin film transistors (TFTs). We investigated the effect of stress current (ISTR) and stress temperature (TSTR) on the electrical properties of the aInGaZnO TFTs when stressed in both the linear and saturation regimes.
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